No | Part number | Description ( Function ) | Manufacturers | |
4 | KM684000 | 524288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung |
|
3 | KM684000B | 512Kx8 bit Low Power CMOS Static RAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns |
Samsung |
|
2 | KM684000C | 512Kx8 bit Low Power CMOS Static RAM KM684000C Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize Draft Date October 20,1998 April 12, 1999 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG |
Samsung |
|
1 | KM684000L | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |