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KM681000E PDF Datasheet

The KM681000E is 128kx8 Bit Low Power Cmos StatIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 KM681000E
128Kx8 bit Low Power CMOS Static RAM

KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final 1.01 December 1, 19

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to KM681000E

Part No Description ( Function) Manufacturers PDF
KM681000B   128K x 8-bit Low Power CMOS Static RAM

KM681000B Family 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM681000B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and have various pack

Samsung
Samsung
datasheet pdf
KM681000BL   128K x 8-bit Low Power CMOS Static RAM

KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com

Samsung
Samsung
datasheet pdf
KM681000BL-L   128K x 8-bit Low Power CMOS Static RAM

KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com

Samsung
Samsung
datasheet pdf
KM681000BLE   128K x 8-bit Low Power CMOS Static RAM

KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com

Samsung
Samsung
datasheet pdf
KM681000BLE-L   128K x 8-bit Low Power CMOS Static RAM

KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com

Samsung
Samsung
datasheet pdf

[1]    

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