No | Part number | Description ( Function ) | Manufacturers | |
1 | KM681000E | 128Kx8 bit Low Power CMOS Static RAM KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final 1.01 December 1, 19 |
Samsung semiconductor |
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Recommended search results related to KM681000E |
Part No | Description ( Function) | Manufacturers | |
KM681000B | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM681000B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and have various pack |
Samsung |
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KM681000BL | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
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KM681000BL-L | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
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KM681000BLE | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
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KM681000BLE-L | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |