No | Part number | Description ( Function ) | Manufacturers | |
1 | KM41C464 | CMOS DRAM ww |
Samsung Electronics |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to KM41C464 |
Part No | Description ( Function) | Manufacturers | |
41464P-10 | TMM41464 www.DataSheet4U 4U.com www.DataSheet4U 4U.com www |
Toshiba |
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D41464 | UPD41464 www.Dat |
NEC |
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KM41464A | 64K x 4-Bit DRAM |
Samsung Electronics |
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KM41C4000D | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode KM41C4000D, KM41V4000D CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), a |
Samsung semiconductor |
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KM41C466 | CMOS DRAM www.Dat |
Samsung Electronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |