No | Part number | Description ( Function ) | Manufacturers | |
1 | KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con |
Samsung semiconductor |
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Recommended search results related to KM416V1000C |
Part No | Description ( Function) | Manufacturers | |
KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power su |
Samsung semiconductor |
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KM416V1004A | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung semiconductor |
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KM416V1004C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |