Datasheet KM416S4030CT-FH Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	KM416S4030CT-FH	1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply	Samsung semiconductor

KM416S4030CT Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
KM416S4030CT-G	1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar	Samsung semiconductor
KM416S4030CT-FL	1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar	Samsung semiconductor
KM416S4030CT-FH	1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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