No | Part number | Description ( Function ) | Manufacturers | |
1 | KM416S4030CT-F8 | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to KM416S4030CT-F8 |
Part No | Description ( Function) | Manufacturers | |
KM416S4030CT-F10 | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar |
Samsung semiconductor |
|
KM416S4030CT-F7 | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar |
Samsung semiconductor |
|
KM416S4030CT-FH | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar |
Samsung semiconductor |
|
KM416S4030CT-FL | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar |
Samsung semiconductor |
|
KM416S4030CT-G | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standar |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |