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KM416S4030C PDF Datasheet

The KM416S4030C is 1m X 16bit X 4 Banks Synchronous Dram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 KM416S4030C
1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad

Samsung semiconductor
Samsung semiconductor
pdf
6 KM416S4030CT-F10
1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad

Samsung semiconductor
Samsung semiconductor
pdf
5 KM416S4030CT-F7
1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad

Samsung semiconductor
Samsung semiconductor
pdf
4 KM416S4030CT-F8
1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad

Samsung semiconductor
Samsung semiconductor
pdf
3 KM416S4030CT-FH
1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad

Samsung semiconductor
Samsung semiconductor
pdf
2 KM416S4030CT-FL
1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with ad

Samsung semiconductor
Samsung semiconductor
pdf

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