No | Part number | Description ( Function ) | Manufacturers | |
1 | KM416C1204C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K |
Samsung semiconductor |
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Recommended search results related to KM416C1204C |
Part No | Description ( Function) | Manufacturers | |
KM416C1200AT-6T | C-MOS 1M 16-BIT DYNAMIC RAM datasheet39.com ********** -TOP VIEW18 KM416C1200AT-6T (1/2) IL08 C-MOS 1M 16-BIT DYNAMIC RAM WITH FAST PAGE MODE 2 3 4 5 7 8 9 10 35 36 37 38 40 41 42 43 DQ1 I/O 1 VDD(+5V) 2 GND 44 43 DQ16 I/O 42 DQ15 I/O 41 DQ14 I/O 40 DQ13 I/O GND 39 38 DQ12 I/O 37 DQ11 I/O 36 DQ10 |
ETC |
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KM416C1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power su |
Samsung semiconductor |
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KM416C1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power su |
Samsung semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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