No | Part number | Description ( Function ) | Manufacturers | |
1 | KLV-32V400A | LCD Colour TV LCD Colour TV Operating Instructions KLV-46V400A KLV-40V400A KLV-32V400A © 2008 Sony Corporation 3-300-887-13(1) Free Datasheet http:// / Introduction Thank you for choosing this Sony product. Before operating the TV, please read this manual thoroughly and retain it for future reference. The illustrations used in this manual are of the KLV-32V400A unless |
SONY |
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Recommended search results related to KLV-32V400A |
Part No | Description ( Function) | Manufacturers | |
HYM324000GD- | 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information • • 4 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) |
Siemens |
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IS42LS32400A | 128-MBIT SYNCHRONOUS DRAM IS42S81600A, IS42LS81600A IS42S16800A, IS42LS16800A IS42S32400A, IS42LS32400A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 133 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding r |
Integrated Circuit Solution |
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IS42RM32400E | 128Mb Mobile Synchronous DRAM IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Pro |
ISSI |
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IS42RM32400F | 1M x 32Bits x 4Banks Mobile Synchronous DRAM IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive e |
ISSI |
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IS42RM32400G | 1M x 32Bits x 4Banks Mobile Synchronous DRAM IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenc |
ISSI |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |