No | Part number | Description ( Function ) | Manufacturers | |
1 | KHB7D0N65F2 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description KHB7D0N65P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. I |
KEC |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
KHB7D0N65F1 | (KHB7D0N65F1 / KHB7D0N65P1) High Voltage MOSFETs SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor corre |
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KHB7D0N65P1 | (KHB7D0N65F1 / KHB7D0N65P1) High Voltage MOSFETs SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor corre |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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