No | Part number | Description ( Function ) | Manufacturers | |
1 | KGF1322 | Power FET E2Q0040-38-71 This version: Jul. 1998 Previous version: Jan. 1998 KGF1322 ¡ electronic components ¡ electronic components KGF1322 Power FET (Ceramic Package Type) GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current ope |
OKI electronic |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to KGF1322 |
Part No | Description ( Function) | Manufacturers | |
2SB1322 | Power Transistors PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ Power Transistors This pro |
Panasonic Semiconductor |
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2SB1322A | Silicon PNP epitaxial planer type(For low-frequency power amplification) Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm For low-frequency power amplification Complementary to 2SD1994A I Features • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 Parameter |
Panasonic Semiconductor |
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2SB1322A | Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SB1322A FEATURES Power dissipation PCM: 1 W (Tamb=25℃) TRANSISTOR (PNP) TO-92 1. EMITTER 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction |
TRANSYS |
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2SB1322A | PNP Plastic Encapsulated Transistor 2SB1322A Elektronische Bauelemente -1A , -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Allow Supply with The Radial Taping G H J Emitter Collector Base D REF. Millimeter Min. |
SeCoS |
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2SK1322 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1322 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta= |
Inchange Semiconductor |
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Vishay |
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