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KFG1216U2M PDF Datasheet

The KFG1216U2M is Flash Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 KFG1216U2M
FLASH MEMORY

OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A Version: Ver. 1.4 Date: June 15th, 20

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to KFG1216U2M

Part No Description ( Function) Manufacturers PDF
KFG1216U2A   FLASH MEMORY

OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. KFG1216Q2A KFG1216D2A KFG1216U2A VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/63FBGA 63FB

Samsung semiconductor
Samsung semiconductor
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HA12162   (HA12141 - HA12162) Dolby-B and C-Type Noise Reduction System

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c

Hitachi
Hitachi
datasheet pdf
HA12162FP   Dolby B- and C-Type Noise Reduction System

HA12141NT, HA12142NT, HA12170NT, HA12161FP, HA12162FP Dolby B- and C-Type Noise Reduction System ADE-207-036B (Z) 3rd Edition Jun. 1999 Description HA12141/142NT, HA12170NT, HA12161/162FP are silicon monolithic bipolar IC series providing dual channel Dolby B- and C-type noise r

Hitachi Semiconductor
Hitachi Semiconductor
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HY57V121620LT   Synchronous DRAM

HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of

Hynix Semiconductor
Hynix Semiconductor
datasheet pdf
HY57V121620T   Synchronous DRAM

HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of

Hynix Semiconductor
Hynix Semiconductor
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
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