No | Part number | Description ( Function ) | Manufacturers | |
1 | KFG1216U2A | FLASH MEMORY OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. KFG1216Q2A KFG1216D2A KFG1216U2A VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/63FBGA 63FBGA(LF)/63FBGA 63FBGA(LF)/63FBGA Version: Ver. 1.0 Date: May 17th, 2005 1 OneNAND512(KFG1216x2A-xx |
Samsung semiconductor |
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Part No | Description ( Function) | Manufacturers | |
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HY57V121620LT | Synchronous DRAM HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of |
Hynix Semiconductor |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |