No | Part number | Description ( Function ) | Manufacturers | |
1 | KF11N50F | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Q |
KEC |
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Part No | Description ( Function) | Manufacturers | |
KF11N50P | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power |
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1150MP | 150W / 50V / Class C Avionics 1025 - 1150 Mhz 1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transis |
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1150PT | Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1150PT Series RRooHHSS www.nellsemi.com Page 2 of 2 |
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2SA1150 | TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo |
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2SB1150 | PNP SILICON DARLINGTON TRANSISTOR |
NEC |
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Part Number | Function | Manufacturers | |
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Vishay |
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