No | Part number | Description ( Function ) | Manufacturers | |
1 | KDV358F | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : TFSC. (Max.) KDV358F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 15 |
KEC |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
KDV358 | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC. (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 1 |
KEC |
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1A358 | High-Performance PIN(Datacom/ Telecom/ General Purpose) PRODUCT INFORMATION 1300nm 1A358 1550nm High-Performance PIN The very high speed and low capacitance of this InGaAs PIN Photodiode makes it ideal for datacom, telecom and general purpose applications. Its double-lens optical system is designed for single-mode fiber as well as for |
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