Datasheet KDV303N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	KDV303N	Digital FET SMD Type Digital FET, N-Channel KDV303N MOSFET IC SOT-23 ■ Features ● 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. ●	Guangdong Kexin Industrial

KDV3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
KDV358	SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC. (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 1	KEC
KDV348E	Varactor Diode SEMICONDUCTOR VCO. FEATURES Low Series Resistance : rS=0.50 Small Package. (Max.) CATHODE MARK C 1 KDV348E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperatu	KEC semiconductor
KDV386S	SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =1.8 (Min.) Low Series Resistance. : rS=0.9 (Max.) Good C-V Linearity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR	KEC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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