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Datasheet KDV251 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KDV251 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) |
.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 3 | KDV251M | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
KDV251M/S
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj |
 KEC |
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| 2 | KDV251M | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) |
KEC(Korea Electronics) |
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| 1 | KDV251S | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
KDV251M/S
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj |
KEC |
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