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KDV245E PDF Datasheet

The KDV245E is Variable Capacitance Diode SilICon Epitaxial Planar Diode(vco For Uhf Band. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 KDV245E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF Band Radio. KDV245E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.) CATHODE MARK FEATURES C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range )

KEC(Korea Electronics)
KEC(Korea Electronics)
pdf

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Recommended search results related to KDV245E

Part No Description ( Function) Manufacturers PDF
KDV245   VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF Band Radio. KDV245 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G FEATURES High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.) K A H E

KEC(Korea Electronics)
KEC(Korea Electronics)
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1422455C   Bobbin Type Inductors

www.murata-ps.com 1400 Series Bobbin Type Inductors FEATURES n RoHS compliant n Radial format n -40°C to 85°C operating temperature n Up to 13A IDC n 10μH to 22mH n Low DC resistance n Fully tinned leads n PCB mounting hole n Low temperature dependence n Backward compatible

Murata
Murata
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1N3245   Diode 300V 275A 2-Pin DO-9

New Jersey Semiconductor
New Jersey Semiconductor
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1N4245   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

Certificate TH97/10561QM Certificate TW00/17276EM 1N4245 - 1N4249 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere M1A FEATURES : * Glass passivated chip * High forward surge current capability * High reliability * Low reverse current * Lo

EIC
EIC
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1N4245   GLASS PASSIVATED SILICON RECTIFIERS

1N4245 1N4248 1N4246 1N4249 1N4247 GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLT GPR-1A CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4245 series types are silicon rectifiers mounted in a hermetically sealed, glass passivate

Central Semiconductor
Central Semiconductor
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