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Datasheet KDV240 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KDV240 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV240
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
FEATURES
High Capacitance Ratio : C1V/C4V =2.1(Typ.) Low Series Resistance : rs=0.28 Useful for Small Size Tuner. (Typ.)
K
A
H
E
2 D
J C I
MAXIMUM RATI |
.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 2 | KDV240E | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
ANTENNA TUNNING APPLICATION
FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min.) Excellent C-V Characteristics, and Small Tracking Error.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperatu |
 KEC |
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| 1 | KDV240E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV240E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
High Capacitance Ratio : C1V/C4V =2.1(Typ.) Low Series Resistance : rs=0.28 Useful for Small Size Tuner. (Typ.)
CATHODE MARK
FEATURES
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARA |
KEC(Korea Electronics) |
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