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Datasheet KDS121 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | KDS121 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) | KEC(Korea Electronics) | diode |
2 | KDS121 | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: USM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) R | KEC | diode |
3 | KDS121E | SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
KDS121E
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small Package °§ Low Forward Voltage °§ Fast Reverse Recovery Time °§ Small Total Capacitance
: ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.).
A G H
2 1
| KEC | diode |
4 | KDS121V | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Very Small Package
: VSM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Pe | KEC | diode |
KDS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | KDS | Intrusion Switches
KDS Series Intrusion Switches
Features/Benefits • Slot mount into chassis to
reduce installation cost • Wire harness length & connector easily customized • Available in N.O. or N.C. configuration • RoHS compliant
Typical Applications • Intrusion/Alarm switch in
networ ITT Industries data | | |
2 | KDS112 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics) diode | | |
3 | KDS112 | SILICON EPITAXIAL TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperat KEC diode | | |
4 | KDS112E | SILICON EPITAXIAL TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperat KEC diode | | |
5 | KDS113 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics) diode | | |
6 | KDS113 | SILICON EPITAXIAL TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
SYMBOL VR KEC diode | | |
7 | KDS114 | SILICON EPITAXIAL PLANAR DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics) diode | |
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Número de pieza | Descripción | Fabricantes | |
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