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Datasheet KDS120E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KDS120E | SCHOTTKY BARRIER TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.92V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=2.2pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) |  KEC | diode |
KDS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KDS | Intrusion Switches
KDS Series Intrusion Switches
Features/Benefits • Slot mount into chassis to
reduce installation cost • Wire harness length & connector easily customized • Available in N.O. or N.C. configuration • RoHS compliant
Typical Applications • Intrusion/Alarm switch in
networ  ITT Industries data | | |
| 2 | KDS112 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS).gif){kind=small} KEC(Korea Electronics) diode | | |
| 3 | KDS112 | SILICON EPITAXIAL TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperat KEC diode | | |
| 4 | KDS112E | SILICON EPITAXIAL TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperat KEC diode | | |
| 5 | KDS113 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics) diode | | |
| 6 | KDS113 | SILICON EPITAXIAL TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
SYMBOL VR KEC diode | | |
| 7 | KDS114 | SILICON EPITAXIAL PLANAR DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics) diode | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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