Datasheet KDB2670 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	KDB2670	N-Channel PowerTrench MOSFET SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.	Kexin

KDB2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
KDB2552	N-Channel PowerTrench MOSFET SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2552(FDB2552) Features rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4	Kexin
KDB2670	N-Channel PowerTrench MOSFET SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +	Kexin
KDB2572	N-Channel PowerTrench MOSFET SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.	Kexin

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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