No | Part number | Description ( Function ) | Manufacturers | |
1 | K9WAG08U1E | 4Gb E-die NAND Flash SAMSUNG CONFIDENTIAL Rev.1.2, Jun. 2013 K9F4G08U0E K9K8G08U0E K9K8G08U1E K9WAG08U1E 4Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on |
Samsung |
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Part No | Description ( Function) | Manufacturers | |
K9WAG08U1A | (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPL |
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K9WAG08U1D | 4Gb D-die NAND Flash www.DataSheet4U.net Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and speci |
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K9WAG08U1M | (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR O |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |