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Datasheet K9W4G08U1M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K9W4G08U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft |  Samsung | data |
K9W Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K9W4G08U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 2 | K9W4G16U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 3 | K9W8G08U1M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory K9W8G08U1M K9K4G08Q0M K9K4G08U0M
K9K4G16Q0M K9K4G16U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1 0.2
History
1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1. The 3rd Byte ID after 90h ID read command is don Samsung data | | |
| 4 | K9W8G16U1M | Nand Flash Memory K9W8G08U1M K9K4G08Q0M K9K4G16Q0M K9K4G08U0M K9K4G16U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1 0.2
History
1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1. The 3rd Byte ID after 90h ID Samsung data | | |
| 5 | K9WAG08U1A | (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9WAG08U1A K9K8G08U0A K9NBG08U5A
FLASH MEMORY
K9XXG08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR  Samsung semiconductor data | | |
| 6 | K9WAG08U1D | 4Gb D-die NAND Flash www.DataSheet4U.net
Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D
Advance
4Gb D-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed Samsung data | | |
| 7 | K9WAG08U1E | 4Gb E-die NAND Flash SAMSUNG CONFIDENTIAL
Rev.1.2, Jun. 2013 K9F4G08U0E K9K8G08U0E K9K8G08U1E K9WAG08U1E
4Gb E-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein a Samsung data | |
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