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K9K1G08U0B PDF Datasheet

The K9K1G08U0B is 128m X 8 Bit Nand Flash Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K9K1G08U0B
128M x 8 Bit NAND Flash Memory

K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 15 ) -Error in write or read operation ( page 16 ) -Program Flow

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K9K1G08U0B

Part No Description ( Function) Manufacturers PDF
K9K1G08U0A   128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung semiconductor
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K9K1G08U0A   128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

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K9K1G08U0A1   128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

Samsung semiconductor
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K9K1G08U0M-YCB0   128M x 8 Bit NAND Flash Memory

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is requ

Samsung semiconductor
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K9K1G08U0M-YIB0   128M x 8 Bit NAND Flash Memory

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