No | Part number | Description ( Function ) | Manufacturers | |
1 | K9K1G08U0B | 128M x 8 Bit NAND Flash Memory K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 15 ) -Error in write or read operation ( page 16 ) -Program Flow |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K9K1G08U0B |
Part No | Description ( Function) | Manufacturers | |
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K9K1G08U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for |
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Samsung semiconductor |
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K9K1G08U0M-YCB0 | 128M x 8 Bit NAND Flash Memory K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is requ |
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K9K1G08U0M-YIB0 | 128M x 8 Bit NAND Flash Memory |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |