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Datasheet K9K1G08U0A1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K9K1G08U0A1 | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A
Preliminary
FLASH MEMORY
Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History
Revision No. History
0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns o | Samsung semiconductor | data |
K9K Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K9K1208D0C | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No.
0.0 1.0
History
Data Sheet 1997 Data Sheet 1998 1. Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2. Changed tPROG parameter : 1.5ms(Max.) → 1.0ms( Samsung semiconductor data | | |
2 | K9K1208Q0C | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr Samsung semiconductor data | | |
3 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
4 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
5 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
6 | K9K1208U0A-YIB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
7 | K9K1208U0A-YIB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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