| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | K9K1208U0M | 64M x 8 Bit NAND Flash Memory K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34) 3. Add the data protection Vc |
 Samsung semiconductor |
|
| 2 | K9K1208U0M-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycle Time (tWC) WE High hold Time (tWH) Data Hold Time (tDH) RE High Hold Time (tRE |
Samsung semiconductor |
|
| 1 | K9K1208U0M-YIB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycle Time (tWC) WE High hold Time (tWH) Data Hold Time (tDH) RE High Hold Time (tRE |
Samsung semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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