No | Part number | Description ( Function ) | Manufacturers | |
3 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. |
Samsung semiconductor |
|
2 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. |
Samsung semiconductor |
|
1 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |