No | Part number | Description ( Function ) | Manufacturers | |
3 | K9F6408Q0C | 8M x 8 Bit Bit NAND Flash Memory ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K120 |
Samsung semiconductor |
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2 | K9F6408Q0C-B | 8M x 8 Bit Bit NAND Flash Memory K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. Package part number is modified. K9F6408U0C-Y ---> K9F6408U0C_T 3. AC parameter is changed. tRP(min.) : 30ns --> 25ns 0.2 1. TBGA package is change |
Samsung semiconductor |
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1 | K9F6408Q0C-H | 8M x 8 Bit Bit NAND Flash Memory K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. Package part number is modified. K9F6408U0C-Y ---> K9F6408U0C_T 3. AC parameter is changed. tRP(min.) : 30ns --> 25ns 0.2 1. TBGA package is change |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |