No | Part number | Description ( Function ) | Manufacturers | |
1 | K9F4G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to chan |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
K9F4G08U0A | (K9xxG08UxA) FLASH MEMORY K9K8G08U1A K9F4G08U0A Preliminary FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMP |
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K9F4G08U0B | FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRU ED AS GR ANTING ANY EXPRESS OR IMPLIED, BY ESTOPPE |
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K9F4G08U0D | 4Gb D-die NAND Flash www.DataSheet4U.net Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and speci |
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K9F4G08U0E | 4Gb E-die NAND Flash SAMSUNG CONFIDENTIAL Rev.1.2, Jun. 2013 K9F4G08U0E K9K8G08U0E K9K8G08U1E K9WAG08U1E 4Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specification |
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K9F4G08U0M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance The attached data sheets are p |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |