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K9F2808U0M- PDF Datasheet

The K9F2808U0M- is 16m X 8 Bit Nand Flash Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
3 K9F2808U0M-
16M x 8 Bit NAND Flash Memory

K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(M

Samsung semiconductor
Samsung semiconductor
pdf
2 K9F2808U0M-YCB0
16M x 8 Bit NAND Flash Memory

K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(M

Samsung semiconductor
Samsung semiconductor
pdf
1 K9F2808U0M-YIB0
16M x 8 Bit NAND Flash Memory

K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(M

Samsung semiconductor
Samsung semiconductor
pdf

[1]    

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