No | Part number | Description ( Function ) | Manufacturers | |
1 | K9F1G08U0B | Flash Memory K9F1G08U0B FLASH MEMORY K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN T |
Samsung Electronics |
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Recommended search results related to K9F1G08U0B |
Part No | Description ( Function) | Manufacturers | |
K9F1G08U0A | FLASH MEMORY ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table |
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K9F1G08U0A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. The tADL(Address to Data Loading Time) is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the tim |
Samsung semiconductor |
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K9F1G08U0C | FLASH MEMORY K9F1G08B0C K9F1G08U0C Advance FLASH MEMORY K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHE |
Samsung |
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K9F1G08U0D | 1Gb NAND Flash Rev. 1.1, Nov. 2010 K9F1G08U0D 1Gb NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All in |
Samsung |
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K9F1G08U0E | 1Gb E-die NAND Flash SAMSUNG CONFIDENTIAL Rev. 1.11, Aug. 2013 K9F1G08U0E 1Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for re |
Samsung semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |