No | Part number | Description ( Function ) | Manufacturers | |
11 | K9F1208U0 | 64M x 8 Bit NAND Flash Memory K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program F |
Samsung semiconductor |
|
10 | K9F1208U0A | (K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory K9F1208D0A K9F1216D0A K9F1208U0A K9F1216U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed. (before) 9 x 11 /0.8mm pitch , Width 1.0 mm (after ) To Be Decided. TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed |
Samsung semiconductor |
|
9 | K9F1208U0B | 64M x 8 Bit NAND Flash Memory K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Apr. 24th 2004 Remark Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInf |
Samsung semiconductor |
|
8 | K9F1208U0B | 64M x 8 Bit NAND Flash Memory K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( |
Samsung semiconductor |
|
7 | K9F1208U0B-D | 64M x 8 Bit NAND Flash Memory K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Apr. 24th 2004 Remark Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInf |
Samsung semiconductor |
|
6 | K9F1208U0B-V | 64M x 8 Bit NAND Flash Memory K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Apr. 24th 2004 Remark Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInf |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |