No | Part number | Description ( Function ) | Manufacturers | |
1 | K9F1208B0B | 64M x 8 Bit NAND Flash Memory K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K9F1208B0B |
Part No | Description ( Function) | Manufacturers | |
K9F1208B0C | FLASH MEMORY K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPL |
Samsung semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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