No | Part number | Description ( Function ) | Manufacturers | |
7 | K8D1716U | 16M Dual Bank NOR Flash Memory K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.6V for Read and Write operations • |
Samsung |
|
6 | K8D1716UBB | 16M Dual Bank NOR Flash Memory K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.6V for Read and Write operations • |
Samsung |
|
5 | K8D1716UBC | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 0.2 1.0 Initial Draft Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Specification finalized Draft Date July 25, 2004 Sep 16, 2004 Nov 29, 2004 Dec 16, 2004 Remark Advance Prelimin |
Samsung semiconductor |
|
4 | K8D1716UBC | 16M-Bit Dual Bank NOR Flash Memory K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 0.2 1.0 Initial Draft Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Specification finalized Draft Date July 25, 2004 Sep 16, 2004 Nov 29, 2004 Dec 16, 2004 Remark Advance Prelimin |
Samsung Electronics |
|
3 | K8D1716UTB | 16M Dual Bank NOR Flash Memory K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.6V for Read and Write operations • |
Samsung |
|
2 | K8D1716UTC | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 0.2 1.0 Initial Draft Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Specification finalized Draft Date July 25, 2004 Sep 16, 2004 Nov 29, 2004 Dec 16, 2004 Remark Advance Prelimin |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |