No | Part number | Description ( Function ) | Manufacturers | |
1 | K8A65D | TK8A65D TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A65D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Abso |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
TK8A65D | Switching Regulator Applications TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A65D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leaka |
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