Datasheet K8A50D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K8A50D	TK8A50D TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500	Toshiba

K8A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K8A50D	TK8A50D TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.) Low leakage current: IDSS = 10	Toshiba
K8A60DA	TK8A60DA TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDS	Toshiba Semiconductor
K8A65D	TK8A65D TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A65D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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