No | Part number | Description ( Function ) | Manufacturers | |
3 | K7R321882 | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM K7R323682M K7R321882M K7R320982M Document Title 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Update JTAG test conditions. Reserved pin for high density name change from NC to Vss |
Samsung semiconductor |
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2 | K7R321882C | (K7R32xx82C) QDR II b2 SRAM K7R323682C K7R321882C K7R320982C 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTO |
Samsung semiconductor |
|
1 | K7R321882M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM K7R323682M K7R321882M K7R320982M Document Title 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Update JTAG test conditions. Reserved pin for high density name change from NC to Vss |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |