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K7N403601B PDF Datasheet

The K7N403601B is (k7n401801b / K7n403601b) 128kx36 & 256kx18 Pipelined Ntram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K7N403601B
(K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM

K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, from 300mA to 250mA at -13, ISB1 ; from 100mA to 80mA 1. Add x32 org. and industrial temperatu

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K7N403601B

Part No Description ( Function) Manufacturers PDF
K7N403601A   (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM

K7N403601A K7N401801A 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed DC condition at Icc and ISB. Icc ; from 350mA to 400mA at -16, from 3

Samsung semiconductor
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K7N403601M   (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and

Samsung semiconductor
Samsung semiconductor
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K7N403609B   (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM

K7N403609B K7N401809B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed DC parameters Icc ; from 470mA to 400mA at -25, from 440mA to 360mA at

Samsung semiconductor
Samsung semiconductor
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