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Datasheet K7M321825M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K7M321825M | 1Mx36 & 2Mx18 Flow-Through NtRAM K7N163601A K7N161801A
Document Title
512Kx36 & 1Mx18 Pipelined N tRAM TM
512Kx36 & 1Mx18-Bit Pipelined N tRAMTM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. 1. 1. 2. 1. Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge. From |  Samsung semiconductor | data |
| 2 | K7M321825M-QC75 | 1Mx36 & 2Mx18 Flow-Through NtRAM K7M323625M K7M321825M
Document Title
1Mx36 & 2Mx18 Flow-Through NtRAMTM
1Mx36 & 2Mx18-Bit Flow Through N tRAMTM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2 | Samsung semiconductor | data |
| 3 | K7M321825M-QC75 | 1Mx36 & 2Mx18-Bit Pipelined NtRAM K7M323625M K7M321825M
Document Title
1Mx36 & 2Mx18 Flow-Through NtRAMTM
1Mx36 & 2Mx18-Bit Flow Through N tRAMTM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2 | Samsung semiconductor | data |
K7M Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K7M161825A-QCI65 | 512Kx36 & 1Mx18 Pipelined NtRAM K7I323682M K7I321882M
Document Title
1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved p Samsung semiconductor data | | |
| 2 | K7M161825A-QCI75 | 512Kx36 & 1Mx18 Pipelined NtRAM Samsung semiconductor data | | |
| 3 | K7M161825M | (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM ( )
K7M163625M K7M161825M
Document Title
512Kx36 & 1Mx18 Flow-Through Nt RAM TM
512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM
Revision History
Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Ch Samsung semiconductor data | | |
| 4 | K7M161835B | 512Kx36 & 1Mx18 Flow-Through NtRAM K7M163635B K7M161835B
512Kx36 & 1Mx18 Flow-Through NtRAMTM
18Mb NtRAMTM Specification
100TQFP/165FBGA with Pb/Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS Samsung semiconductor data | | |
| 5 | K7M163625A-QCI65 | 512Kx36 & 1Mx18 Pipelined NtRAM K7N163601A K7N161801A
Document Title
512Kx36 & 1Mx18 Pipelined N tRAM TM
512Kx36 & 1Mx18-Bit Pipelined N tRAMTM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. 1. 1. 2. 1. Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge. From Samsung semiconductor data | | |
| 6 | K7M163625A-QCI75 | 512Kx36 & 1Mx18 Pipelined NtRAM K7N163601A K7N161801A
Document Title
512Kx36 & 1Mx18 Pipelined N tRAM TM
512Kx36 & 1Mx18-Bit Pipelined N tRAMTM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. 1. 1. 2. 1. Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge. From Samsung semiconductor data | | |
| 7 | K7M163625M | (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM ( )
K7M163625M K7M161825M
Document Title
512Kx36 & 1Mx18 Flow-Through Nt RAM TM
512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM
Revision History
Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Ch Samsung semiconductor data | |
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