No | Part number | Description ( Function ) | Manufacturers | |
1 | K7A801809A | 256Kx36 & 512Kx18 Synchronous SRAM K7A803609A K7A801809A Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 1.0 History Initial draft 1. Final spec Release. Draft Date May. 24 . 2000 July. 03. 2000 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K7A801809A |
Part No | Description ( Function) | Manufacturers | |
K7A801809B | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803601M K7A801801M Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. |
Samsung semiconductor |
|
K7A801809B-QC25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. cha |
Samsung semiconductor |
|
K7A801809B-QCI25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. cha |
Samsung semiconductor |
|
K7A801800 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330 |
Samsung semiconductor |
|
K7A801800B-QC14 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. cha |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |