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Datasheet K7A801800 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | K7A801800 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A403600B K7A403200B K7A401800B
Document Title
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, |
Samsung semiconductor |
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2 | K7A801800B-QC14 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) fo |
Samsung semiconductor |
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1 | K7A801800B-QC16 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) fo |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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