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Datasheet K6T4016V3C-RF10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K6T4016V3C-RF10 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0 0.1
History
Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: | Samsung semiconductor | cmos |
K6T Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K6T0808C1D | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
2 | K6T0808C1D-B | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
3 | K6T0808C1D-DB55 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
4 | K6T0808C1D-DB70 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
5 | K6T0808C1D-DL55 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
6 | K6T0808C1D-DL70 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
7 | K6T0808C1D-F | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | |
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Número de pieza | Descripción | Fabricantes | |
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