No | Part number | Description ( Function ) | Manufacturers | |
1 | K6T4016V3C-F | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: 5mA at read/write to 4mA at read ICC1: 5mA to 6mA ICC2: 50mA to 45mA ISB: 0.5mA |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K6T4016V3C-F |
Part No | Description ( Function) | Manufacturers | |
K6T4016V3C | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact |
Samsung semiconductor |
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K6T4016V3C-B | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact |
Samsung semiconductor |
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K6T4016V3C-RB10 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact |
Samsung semiconductor |
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K6T4016V3C-RB70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact |
Samsung semiconductor |
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K6T4016V3C-RB85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |