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K6T4016V3C-F PDF Datasheet

The K6T4016V3C-F is 256kx16 Bit Low Power And Low Voltage Cmos StatIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K6T4016V3C-F
256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: 5mA at read/write to 4mA at read ICC1: 5mA to 6mA ICC2: 50mA to 45mA ISB: 0.5mA

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K6T4016V3C-F

Part No Description ( Function) Manufacturers PDF
K6T4016V3C   256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K6T4016V3C-B   256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K6T4016V3C-RB10   256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K6T4016V3C-RB70   256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K6T4016V3C-RB85   256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Charact

Samsung semiconductor
Samsung semiconductor
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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