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K6T4008U1C-YF70 PDF Datasheet

The K6T4008U1C-YF70 is 512kx8 Bit Low Power And Low Voltage Cmos StatIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K6T4008U1C-YF70
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA

Samsung semiconductor
Samsung semiconductor
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Recommended search results related to K6T4008U1C-YF70

Part No Description ( Function) Manufacturers PDF
K6T4008U1C-YF10   512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K6T4008U1C-YF85   512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea

Samsung semiconductor
Samsung semiconductor
datasheet pdf

[1]    

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