No | Part number | Description ( Function ) | Manufacturers | |
1 | K6T4008U1C-TB10 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K6T4008U1C-TB10 |
Part No | Description ( Function) | Manufacturers | |
K6T4008U1C-TB70 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
Samsung semiconductor |
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K6T4008U1C-TB85 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |