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Datasheet K6T4008C1B-GF70 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K6T4008C1B-GF70 | 512Kx8 bit Low Power CMOS Static RAM K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur | Samsung semiconductor | cmos |
K6T Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K6T0808C1D | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
2 | K6T0808C1D-B | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
3 | K6T0808C1D-DB55 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
4 | K6T0808C1D-DB70 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
5 | K6T0808C1D-DL55 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
6 | K6T0808C1D-DL70 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
7 | K6T0808C1D-F | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | |
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Número de pieza | Descripción | Fabricantes | |
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