No | Part number | Description ( Function ) | Manufacturers | |
1 | K6T1008C2E-RF70 | 128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revise - Add 55ns parts to industrial products. Draft Data October 12, 1998 August 30, 1999 Remark Pre |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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K6T1008C2E-RF55 | 128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |