| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | K6R4008V1C | 512Kx8 Bit High Speed Static PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 |
 Samsung semiconductor |
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Recommended search results related to K6R4008V1C |
| Part No | Description ( Function) | Manufacturers | |
| K6R4008V1B | 512K x8 Bit High Speed Static RAM PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Desig |
Samsung semiconductor |
|
| K6R4008V1B-C | 512K x8 Bit High Speed Static RAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. |
Samsung semiconductor |
|
| K6R4008V1B-I | 512K x8 Bit High Speed Static RAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. |
Samsung semiconductor |
|
| K6R4008V1B-L | 512K x8 Bit High Speed Static RAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. |
Samsung semiconductor |
|
| K6R4008V1B-P | 512K x8 Bit High Speed Static RAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. |
Samsung semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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