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K6F2016U4E-F PDF Datasheet

The K6F2016U4E-F is 128k X16 Bit Super Low Power And Low Voltage Full. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K6F2016U4E-F
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K6F2016U4E-F

Part No Description ( Function) Manufacturers PDF
DS_K6F2016U4E   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - R

Samsung semiconductor
Samsung semiconductor
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DS_K6F2016U4E   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - R

Samsung semiconductor
Samsung semiconductor
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K6F2016U4E   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - R

Samsung semiconductor
Samsung semiconductor
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K6F2016U4G   2Mb(128K x 16 bit) Low Power SRAM

K6F2016U4G Family Preliminary CMOS SRAM 2Mb(128K x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE

Samsung semiconductor
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R6201640   General Purpose Rectifier (300-500 Amperes Average 2400 Volts)

Powerex Power Semiconductors
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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